我组沈健在Adv. Funct. Mater.发表论文
Enabling Ultra‐Narrow‐Band Deep‐Blue Light‐Emitting Diode Via Trapping Injected Holes by Carbon Dots |
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作者： |
Jian Shen,[a]Tianyang Zhang,[a]Jiacheng Li,[a]Zenan Li,[a]Haizhou Yu,[a]Weijie Yuan,[a]Hui Huang,[a]Yang Liu,*[a]and Zhenhui Kang*[a,b] |
单位： |
[a] Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren’ai Road, Suzhou, 215123, Jiangsu, China [b] Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, 999078, Macao, China |
摘要： |
Narrow-band deep-blue light-emitting diodes (LEDs) (CIEy coordinate<0.08, full width at half maximum (FWHM)<20 nm) are important for the next generation of LED-based displays. It remains a significant challenge for the design of narrow-band deep-blue emitters. Herein, a new strategy is proposed for constructing narrow-band deep-blue LEDs that are not dependent on the narrow-band deep-blue emitter, but only need to dope n-type carbon dots (n-CDs) in the active emission layer (EML) of the wide-band blue LEDs. The n-CDs-LEDs show an ultra-narrow deep-blue emission at 430 nm with the color coordinates of (0.15, 0.04) and the FWHM of 19 nm. Wherein the EML is constructed by doping n-CDs in Poly(9,9-dioctylfluorene-co-N-(4-butylphenyl) diphenylamine) (TFB), which neither changes the band structure of TFB nor produces new energy levels. Transient photovoltage (TPV) and various photoelectrochemical characterizations jointly reveal that n-CDs can trap holes to realize the carrier injection into a single energy level of TFB and achieve ultra-narrow deep-blue light emission. This work provides a brand-new and simple way to realize the narrow-band deep-blue LEDs. |
影响因子： |
18.5 |
分区情况： |
1区 |
链接： |