题目：

Broadband Photodetector Based on Graphene-Bi₂Te₃Heterostructure

作者：

Hong Qiao^†,||, Jian Yuan^†,||, Zaiquan Xu^‡, Caiyuan Chen^†, Shenghuang Lin^†,§, Yusheng Wang^†, Jingchao Song^‡, Yan Liu^†, Qasim Khan^†, Hui Ying Hoh^‡, Chun-Xu Pan^┴, Shaojuan Li^†,*, and Qiaoliang Bao^{†, ‡,*}

单位：

^†Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, P. R. China.

^‡Department of Materials Engineering, Monash University, Clayton, Victoria 3800, Australia.

^§Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong SAR, China

^┴School of Physics and Technology, Wuhan University, Wuhan 430072, China

摘要：

Recently, research on graphene based photodetectors has drawn substantial attention due to ultrafast and broadband photoresponse of graphene. However, they usually have low responsivity and low photoconductive gain induced by the gapless nature of graphene, which greatly limit their applications. The synergetic integration of graphene with other two-dimensional (2D) materials to form van der Waal's heterostructure is a very promising approach to overcome these shortcomings. Here we report the growth of graphene-Bi₂Te₃heterostructure where Bi₂Te₃is a small bandgap material from topological insulator family with a similar hexagonal symmetry to graphene. Because of the effective photo-carrier generation and transfer at the interface between graphene and Bi₂Te₃, the device photocurrent can be effectively enhanced without sacrificing the detecting spectral width. Our results show that the graphene-Bi₂Te₃photodetector has much higher photoresponsivity (35 AW^-1at a wavelength of 532 nm) and higher sensitivity (photoconductive gain up to 83), as compared to the pure monolayer graphene-based devices. More interestingly, the detection wavelength range of our device is further expanded to near-infrared (980 nm) and telecommunication band (1550 nm), which is not observed on the devices based on heterostructures of graphene and transition metal dichalcogenides.

影响因子：

12.033

分区情况：

1区

链接：

http://pubs.acs.org/doi/pdf/10.1021/nn506920z